IRF7306TR Datasheet, PDF (4/9 Pages) International Rectifier – Generation V Technology

IRF7306
1000
V _GS = 0V,
f = 1MHz
C _iss = C_gs + C _gd , C_ds SHORTED
C _rss = C _gd
800
C _oss = C _ds + C _gd
600
C iss
400
C o ss
200
Crss
0
A
1
10
100
-V_{D S} , Drain-to-S ource V oltage (V )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
I_D = -3.0A
V_DS = -24V
16
12
8
4
FOR TE ST CIRCUIT
S EE FIGURE 12
0
A
0
5
10
15
20
25
Q _G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
T_J = 1 50 °C
T_J = 25°C
1
0.1
0.0
VGS = 0V _A
0.3
0.6
0.9
1.2
1.5
-V_{S D} , Source-to-D rain V oltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100us
10
1ms
T_C = 25 °C
T_J = 150°C
Single Pulse
10ms
1
1
10
100
-V_DS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area