IRF7303PBF_15 Datasheet, PDF (4/9 Pages) International Rectifier – GENERATION V TECHNOLOGY

IRF7303PbF
1000
800
600
400
V_GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C _gd
C_iss
Coss
200
Crss
0
A
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
I_D = 2.4A
V_DS = 24V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 12
0
A
0
5
10
15
20
25
Q _G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
T_J = 150°C
T_J = 25°C
1
0.1
0.0
VGS = 0V _A
0.5
1.0
1.5
2.0
2.5
V_SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100us
10
1ms
T_A = 25°C
T_J = 150°C
Single Pulse
1
0.1
1
10ms
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area