IRF7201 Datasheet, PDF (4/7 Pages) International Rectifier – HEXFET Power MOSFET

IRF7201
2.0
0.20
ID = 4.6A
1.5
0.15
1.0
0.10
0.5
0.0
V_GS = 10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature (°C)
Fig 5. Normalized On-Resistance
Vs. Temperature
VGS = 4.5V
0.05
VGS = 10V
0.00
0
A
10
20
30
40
I_D , Drain Current (A)
Fig 6. On-Resistance Vs. Drain Current
0.05
200
I_D
TOP
2.1A
3.7A
160
BOTTOM 4.6A
0.04
120
80
0.03
ID = 7.3A
40
0.02
2
A
4
6
8
10
12
14
16
V_GS , Gate-to-Source Voltage (V)
Fig 7. On-Resistance Vs. Gate Voltage
4
0
A
25
50
75
100
125
150
Starting T_J, Junction Temperature (°C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
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