IRF6798MPBF_15 Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET
Power MOSFET plus Schottky Diode

IRF6798MTRPbF
1000
100
TOP
BOTTOM
VGS
10V
5.0V
4.3V
3.5V
3.3V
3.0V
2.8V
2.5V
10
1
2.5V
0.1
0.1
≤60µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000
VDS = 15V
≤60µs PULSE WIDTH
100
TJ = 150°C
10
TJ = 25°C
TJ = -40°C
1
1000
100
TOP
BOTTOM
VGS
10V
5.0V
4.3V
3.5V
3.3V
3.0V
2.8V
2.5V
10
2.5V
1
0.1
≤60µs PULSE WIDTH
Tj = 150°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Output Characteristics
1.6
ID = 37A
1.4
VGS = 10V
VGS = 4.5V
1.2
1.0
0.8
0.1
1
2
3
4
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = C _gd
Coss = Cds + Cgd
Ciss
Coss
1000
Crss
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 7. Normalized On-Resistance vs. Temperature
10
TJ = 25°C
8 ^{Vgs = 3.5V}
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
6 _{Vgs = 7.0V}
Vgs = 8.0V
Vgs = 10V
4 _{Vgs = 15V}
2
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
0
0 25 50 75 100 125 150 175 200
ID, Drain Current (A)
Fig 9. Typical On-Resistance vs.
Drain Current and Gate Voltage
www.irf.com