IRF630N Datasheet, PDF (4/11 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)

IRF630N/S/L
1200
1000
800
600
400
VGS = 0V, f = 1 MHZ
Ciss = Cgs+ Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds+ Cgd
Ciss
Coss
200
Crss
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
16 _{ID = 5.4A}
12
V_DS= 160V
V_DS= 100V
V_DS= 40V
8
4
0
0
5
10
15
20
25
30
Q_G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
T_J = 175° C
1
T_J = 25^° C
0.1
0.2
V _GS = 0 V
0.4
0.6
0.8
1.0
1.2
V_SD ,Source-to-Drain Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
10
100us
1ms
1
T_C = 25 °C
T_J = 175 °C
Single Pulse
0.1
1
10
10ms
100
1000
V_DS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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Fig 8. Maximum Safe Operating Area
4