IRF6215STRR Datasheet, PDF (4/11 Pages) International Rectifier – Advanced Process Technology

IRF6215S/L
2000
V _GS = 0V,
f = 1MHz
C _iss = C _gs + C _gd , C_ds S H O R TE D
C _rss = C _gd
1600
C _oss = C _ds + C _gd
C _iss
1200
C oss
800
Crss
400
0
A
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
I _D = -6.6A
16
V_DS = -120V
V_DS = -75V
V_DS = -30V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
20
40
60
80
Q _G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
T_J = 17 5 °C
10
T_J = 25°C
1
0.1
0.2
VGS = 0V _A
0.6
1.0
1.4
1.8
-V_SD , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
10µs
10
100µs
1m s
T^T_CC = ²2⁵5^°°^CC
T_J = 175°C
Single Pulse
1
10ms
1
10
100
-V_DS , D rain-to-S ourc e V oltage (V )
A
1000
Fig 8. Maximum Safe Operating Area