IRF5Y3205CM Datasheet, PDF (4/7 Pages) International Rectifier – POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.022ohm, Id=18A*)

IRF5Y3205CM
7000
6000
5000
4000
 VGS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
 C_iss
3000
2000
1000
C _oss
C _rss
0
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ ID = 18A}
16
 ^{VDS = 44V}
V_DS = 27V
V_DS = 11V
12
8
4
 FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80
120
160
200
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
 T_J = 150^° C
10
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
 T_J = 25 ^° C
1
0.1
0.2
 ^VGS ^{= 0 V}
0.6
1.0
1.4
1.8
2.2
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
10ms
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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