IRF5N5210_15 Datasheet, PDF (4/7 Pages) International Rectifier – Avalanche Energy Ratings

IRF5N5210
6000
5000
4000
3000
2000
1000
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
C_oss
C_rss
0
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ID = -19A}
16
12
V_DS =-80V
V_DS =-50V
V_DS =-20V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80 120 160 200 240
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
T_J = 150°C
10
T_J = 25°C
1
0.1
0.2
V_GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
-V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
1ms
10ms
100
-VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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