IRF5M3205SCV Datasheet, PDF (4/7 Pages) International Rectifier – HEXFET® POWER MOSFET THRU-HOLE (TO-254AA)

IRF5M3205
7500
6000
 VGS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
4500
 C_iss
3000
1500
0
1
C _oss
C _rss
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ ID = 35A}
16
12
 ^{VDS = 44V}
V_DS = 27V
V_DS = 11V
8
4
 FOR TEST CIRCUIT
SEE FIGURE 13
0
0
50
100
150
200
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150°C
10
1
TJ = 25°C
0.1
0.0
VGS = 0V
0.5
1.0
1.5
2.0
2.5
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µs
1_ms
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
10ms
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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