IRF5800PBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF5800PbF
800
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
600
C_iss
400
200
C_oss
C_rss
0
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = -4.0A
16
V_DS =-16V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
4
8
12
16
20
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10 _{TJ = 150°C}
1
T_J = 25°C
0.1
0.4
V_GS = 0 V
0.8
1.2
1.6
2.0
-V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
10
100us
1ms
1
T_C = 25 °C
10ms
T_J = 150 °C
Single Pulse
0.1
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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