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IRF3710ZGPBF Datasheet, PDF (4/9 Pages) International Rectifier – Advanced Process Technology
IRF3710ZGPbF
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
C iss = Cgs + Cgd, Cds
Crss = Cgd
Coss = Cds + Cgd
SHORTED
Ciss
Coss
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
12.0
ID= 35A
10.0
8.0
VDS= 80V
VDS= 50V
VDS= 20V
6.0
4.0
2.0
0.0
0
20
40
60
80
100
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
100.00
TJ = 175°C
10.00
1.00
TJ = 25°C
0.10
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
1000
100
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
1msec
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 8. Maximum Safe Operating Area
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