IRF3202SPBF Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET Power MOSFET

IRL3202SPbF
3500
3000
2500
2000
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
1500
1000
C_oss
500
C_rss
0
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
15 _{ID = 29A}
12
V_DS = 16V
9
6
3
0
0 10 20 30 40 50 60 70
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
T_J = 150° C
T_J = 25° C
10
V_GS = 0 V
1
0.2
0.8
1.4
2.0
2.6
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
100us
1ms
10
10ms
T_C = 25°C
T_J = 150°C
Single Pulse
1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area