IRF2804PBF_15 Datasheet, PDF (4/12 Pages) International Rectifier – Advanced Process Technology

IRF2804/S/LPbF
12000
10000
8000
6000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
4000
2000
0
1
Coss
Crss
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
20
ID= 75A
16
12
VDS= 32V
VDS= 20V
VDS= 8.0V
8
4
0
0 40 80 120 160 200 240
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.0
100.0 ^{TJ = 175°C}
10.0
1.0
0.1
0.2
TJ = 25°C
VGS = 0V
0.6
1.0
1.4
1.8
2.2
VSD, Source-toDrain Voltage (V)
10000
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
1msec
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 8. Maximum Safe Operating Area
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