CPV364M4F Datasheet, PDF (4/10 Pages) International Rectifier – IGBT SIP MODULE

CPV364M4F
30
25
20
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature ( ° C)
3.0
V_GE = 15V
80 us PULSE WIDTH
I_C = 30A
2.0
I_C = 15A
I_C = 7.5A
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature ( °C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
1 D = 0.50
0 .2 0
0 .1 0
0 .0 5
0 .1
0 .0 2
0 .0 1
S ING LE P ULS E
(THERMA L RE SPONS E)
P_{D M}
t1
t2
N otes:
1. D uty factor D = t1 / t2
0.01
0.0000 1
0.000 1
0 .00 1
0.01
2. P eak TJ = P _{D M} x Z _{thJ C} + T _C
0.1
1
10
t₁ , Re c ta ng ula r Pu ls e D uratio n (se c)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case