AUIRF3205Z Datasheet, PDF (4/14 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRF3205Z/ZS
1000
100
V_GS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
1
0.1
4.5V _{20µs PULSE WIDTH}
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
V_GS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
10
0.1
4.5V _{20µs PULSE WIDTH}
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 25°C
TJ = 175°C
10
1
4.0
VDS = 25V
20µs PULSE WIDTH
5.0 6.0 7.0 8.0 9.0 10.0 11.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
120
TJ = 175°C
100
80
60
TJ = 25°C
40
20
0
0
VDS = 10V
20µs PULSE WIDTH
20
40
60
80
100
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
Vs. Drain Current
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