IRLR014N Datasheet, PDF (3/10 Pages) International Rectifier – HEXFET Power MOSFET

100
TO^TOP^P
V11^V_52G11VV^G05S_VSV
10⁵V^.0V
7.40.V5V
5.30.V5V
4.35.V0V
2.27.V7V
BBOOTTTTOOMM22.0.V5V
10
IRLR/U014N
100
VVGGSS
TTOOPP 1155VV
1120VV
150.0VV
74..05VV
53..05VV
4₃._.5₀V_V
2₂._.7₇V_V
B^BOO^TT^TT^OO^MM ²2^..⁰5^VV
10
1
0.1
0.1
2.5V
20µs PULSE WIDTH
TJ = 25 °C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
2.5V
0.1
0.1
20µs PULSE WIDTH
TJ= 175 °C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
T_J = 25°C
T_J = 175° C
10
1
0.1
2.0
V DS= 50V
20µs PULSE WIDTH
4.0
6.0
8.0
10.0
V_GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.5 _{ID = 10A}
2.0
1.5
1.0
0.5
V_GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3