IRLL024N Datasheet, PDF (3/8 Pages) International Rectifier – HEXFET Power MOSFET

IRLL024N
100
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
10
100
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
10
2.7V
20µs PULSE WIDTH
TJ = 25 ^°C
1
0.1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2.7V
20µs PULSE WIDTH
TJ = 150 ^°C
1
0.1
1
10
100
V_DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
T_J = 25° C
T_J = 150° C
10
V _DS = 25V
20µs PULSE WIDTH
1
2
4
6
8
10
12
V_GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0 _{ID = 3.1A}
1.5
1.0
0.5
V_GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3