IRL2910 Datasheet, PDF (3/8 Pages) International Rectifier – HEXFET Power MOSFET

1000
100
VGS
TOP
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
1000
100
VGS
TOP
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
IRL2910
10
2.5V
20µs PULSE W IDTH
1
TJ = 25°C
A
0.1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
2.5V
20µs PULSE W IDTH
1
T _J = 175°C
A
0.1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
T_J = 2 5 °C
100
T_J = 1 7 5 °C
10
V_DS = 50V
20µs PU LSE W ID TH
1
A
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3.0
ID = 48A
2.5
2.0
1.5
1.0
0.5
0.0
V_GS = 10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature