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IRHYB67134CM Datasheet, PDF (3/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
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IRHYB67134CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 300K Rads (Si) Units
Min
Max
Test Conditions ˆ
BVDSS Drain-to-Source Breakdown Voltage 150
VGS(th) Gate Threshold Voltage
2.0
IGSS
Gate-to-Source Leakage Forward
—
IGSS
Gate-to-Source Leakage Reverse
—
IDSS
Zero Gate Voltage Drain Current
—
RDS(on) Static Drain-to-Source „
On-State Resistance (TO-3)
—
RDS(on) Static Drain-to-Source On-State „
Resistance (Low Ohmic TO-257)
—
—
V
4.0
100
nA
-100
10
µA
0.092
Ω
0.090
Ω
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20V
VDS=120V, VGS=0V
VGS = 12V, ID = 12A
VGS = 12V, ID = 12A
VSD
Diode Forward Voltage „
—
1.2
V
VGS = 0V, ID = 19A
Part numbers IRHYB67134CM and IRHYB63134CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Tables for Single Event Effect Safe Operating Area
Ion Kr
LET = 39 MeV/(mg/cm2)
Energy = 312 MeV
Range = 39 µm
VGS Bias
VDS Bias
(Volts)
(Volts)
0
150
-5
150
-10
150
-15
150
-20
150
Ion Xe
LET = 59 MeV/(mg/cm2)
Energy = 825 MeV
Range = 66 µm
VGS Bias
VDS Bias
(Volts)
(Volts)
0
150
-5
150
-9
150
-10
140
-11
50
-15
40
Ion Au
LET = 90 MeV/(mg/cm2)
Energy = 1480 MeV
Range = 80 µm
VGS Bias
VDS Bias
(Volts)
(Volts)
0
50
-5
50
-10
30
180
150
120
90
60
30
0
0
Kr
Xe
Au
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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