IRHNJ7430SE_15 Datasheet, PDF (3/8 Pages) International Rectifier – Simple Drive Requirements

Radiation Characteristics
IRHNJ7430SE, JANSR2N7466U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BV_DSS
VGS(th)
I_GSS
I_GSS
I_DSS
R_DS(on)
R_DS(on)
V_SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Source „
On-State Resistance (SMD-0.5)
Diode Forward Voltage „
100K Rads (Si)
Min
Max
500
—
2.0
4.5
—
100
—
-100
—
50
—
1.77
—
1.77
—
1.2
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V_GS = 0V, I_D = 1.0mA
VGS = V_DS, I_D = 1.0mA
V_GS = 20V
V_GS = -20V
V_DS = 400V, V_GS = 0V
VGS = 12V, I_D = 2.8A
VGS = 12V, I_D = 2.8A
VGS = 0V, I_D = 4.4A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion
LET
Energy
(MeV/(mg/cm²)) (MeV)
Cu
28
285
Br
36.8
305
Range
(µm) @V_GS=0V @V_GS=-5V
43
375
375
39
350
350
V_DS(V)
@V_GS=-10V
375
350
@V_GS=-15V
375
325
@V_GS=-20V
375
300
400
300
Cu
200
Br
100
0
0
-5
-10
-15
-20
VGS
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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