IRHNA67160 Datasheet, PDF (3/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2), 100V, N-CHANNEL

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IRHNA67160
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
BV_DSS
VGS(th)
I_GSS
I_GSS
I_DSS
R_DS(on)
R_DS(on)
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Source „
On-State Resistance (SMD-2)
Up to 300K Rads (Si)
Min
Max
100
—
2.0
4.0
—
100
—
-100
—
10
—
0.011
—
0.010
V_SD
Diode Forward Voltage „
—
1.2
Part numbers IRHNA67160 and IRHNA63160
Units
V
nA
µA
Ω
Ω
V
Test Conditions ˆ
V_GS = 0V, I_D = 1.0mA
VGS = V_DS, I_D = 1.0mA
V_GS = 20V
V_GS = -20V
V_DS= 80V, V_GS=0V
VGS = 12V, I_D = 56A
VGS = 12V, I_D = 56A
VGS = 0V, I_D = 56A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy Range
(MeV/(mg/cm2)) (MeV)
(µm)
@VGS= @VGS=
0V
-5V
Br
36.7
I
59.8
309
39.5
100
100
341
32.5
100
100
Au
82.3
350
28.4
100
100
@VGS=
-10V
100
100
-
VDS (V)
@VGS= @VGS= @VGS= @VGS=
-15V -17V -19V -20V
100
100
100
40
30
-
-
-
-
-
-
-
120
100
80
Br
60
I
40
Au
20
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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