IRHM7360_15 Datasheet, PDF (3/12 Pages) International Rectifier – Simple Drive Requirements

Radiation Characteristics
IRHM7360, IRHM8360 Devices
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier
comprises three radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MIL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate condition of 12 volts per
note 6 and a V_DS bias condition equal to 80% of the
device rated voltage per note 7. Pre- and post- irra-
diation limits of the devices irradiated to 1 x 10⁵ Rads
(Si) are identical and are presented in Table 1, col-
umn 1, IRHM7360. Post-irradiation limits of the de-
vices irradiated to 1 x 10⁶ Rads (Si) are presented in
Table 1, column 2, IRHM8360. The values in Table 1
will be met for either of the two low dose rate test
circuits that are used. Both pre- and post-irradiation
performance are tested and specified using the same
drive circuitry and test conditions in order to provide a
direct comparison.
High dose rate testing may be done on a special re-
quest basis using a dose rate up to 1 x 10¹² Rads (Si)/
Sec (See Table 2).
International Rectifier radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects char-
acterization is shown in Table 3.
Table 1. Low Dose Rate † ‡
Parameter
IRHM7360 IRHM8360
100K Rads (Si) 1000K Rads (Si) Units
Min Max Min Max
Test Conditions ‰
BV_DSS Drain-to-Source Breakdown Voltage 400 — 400 — _V
VGS(th) Gate Threshold Voltage …
2.0 4.0 1.25 4.5
V_GS = 0V, I_D = 1.0mA
VGS = V_DS, I_D = 1.0mA
I_GSS
I_GSS
Gate-to-Source Leakage Forward — 100 — 100 _nA
Gate-to-Source Leakage Reverse — -100 — -100
V_GS = 20V
V_GS = -20 V
I_DSS
Zero Gate Voltage Drain Current
— 50 — 100 µA V_DS=0.8 x Max Rating, V_GS =0V
R_DS(on)1 Static Drain-to-Source …
On-State Resistance One
— 0.22 — 0.31 _Ω
VGS = 12V, I_D = 14A
V_SD
Diode Forward Voltage …
— 1.8 — 1.8 V TC = 25°C, IS = 22A, V_GS = 0V
Table 2. High Dose Rate ˆ
Parameter
V_DSS Drain-to-Source Voltage
IPP
di/dt
L1
10¹¹ Rads (Si)/sec 10¹² Rads (Si)/sec
Min Typ Max Min Typ Max Units
Test Conditions
— — 320 — — 320 V Applied drain-to-source voltage during
gamma-dot
— 6.4 — — 6.4 — A Peak radiation induced photo-current
— — 16 — — 2.3 A/µsec Rate of rise of photo-current
20 — — 137 — — µH Circuit inductance required to limit di/dt
Table 3. Single Event Effects
LET (Si)
Ion
(MeV/mg/cm²)
Ni
28
Fluence
(ions/cm²)
1x 10⁵
Range
(µm)
~41
V_DSBias
(V)
275
V_GS Bias
(V)
-5
www.irf.com
3