IRHLYS797034CM_15 Datasheet, PDF (3/9 Pages) International Rectifier – Simple Drive Requirements

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IRHLYS797034CM, 2N7625T3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
BV_DSS
VGS(th)
I_GSS
I_GSS
I_DSS
R_DS(on)
R_DS(on)
Parameter
Up to 300K Rads (Si)¹
Min
Max
Drain-to-Source Breakdown Voltage -60
—
Gate Threshold Voltage
-1.0
-2.0
Gate-to-Source Leakage Forward
—
-100
Gate-to-Source Leakage Reverse
—
100
Zero Gate Voltage Drain Current
—
Static Drain-to-Source „
On-State Resistance (TO-3)
—
Static Drain-to-Source On-state „
Resistance (Low Ohmic TO-257)
—
-1.0
0.076
0.074
Units
V
nA
µA
Ω
Ω
Test Conditions
V_GS = 0V, I_D = -250µA
VGS = V_DS, I_D = -250µA
V_GS = -10V
V_GS = 10V
V_DS= -48V, V_GS= 0V
VGS = -4.5V, I_D = -16.6A
VGS = -4.5V, I_D = -16.6A
V_SD
Diode Forward Voltage„
—
-5.0
V
VGS = 0V, I_D = -20A
1. Part numbers IRHLYS797034, IRHLYS793034
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
VDS (V)
(MeV/(mg/cm²))
(MeV)
(µm)
@VGS=
0V
@VGS= @VGS= @VGS=
2V
4V
5V
38 ± 5%
300 ± 7.5%
38 ± 7.5%
-60
-60
-60
-60
62 ± 5%
355 ± 7.5%
33 ± 7.5%
-60
-60
-60
-60
85 ± 5%
380 ± 7.5%
29 ± 7.5%
-60
-60
-60
-60
@VGS=
6V
-60
-60
-
@VGS=
7V
-40
-
-
-70
-60
-50
-40
-30
-20
-10
0
0 1 2 34 5 6 7
Bias VGS (V)
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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