IRHLNJ797034_15 Datasheet, PDF (3/9 Pages) International Rectifier – Simple Drive Requirements

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IRHLNJ797034, 2N7624U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-
ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
BV_DSS
VGS(th)
I_GSS
I_GSS
I_DSS
R_DS(on)
R_DS(on)
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Source On-state „
Resistance (SMD-0.5)
Upto 300K Rads (Si)¹
Min
Max
-60
—
-1.0
-2.0
—
-100
—
100
—
-1.0
—
0.076
—
0.072
V_SD
Diode Forward Voltage„
—
-5.0
1. Part numbers IRHLNJ797034, IRHLNJ793034
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V_GS = 0V, I_D = -250µA
VGS = V_DS, I_D = -250µA
V_GS = -10V
V_GS = 10V
V_DS= -48V, V_GS= 0V
VGS = -4.5V, I_D = -14.9A
VGS = -4.5V, I_D = -14.9A
VGS = 0V, I_D = -22A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
VDS (V)
(MeV/(mg/cm²))
(MeV)
(µm)
@VGS=
0V
@VGS= @VGS=
2V
4V
38 ± 5%
300 ± 7.5%
38 ± 7.5%
-60
-60
-60
62 ± 5%
355 ± 7.5%
33 ± 7.5%
-60
-60
-60
85 ± 5%
380 ± 7.5%
29 ± 7.5%
-60
-60
-60
@VGS=
5V
-60
-60
-60
@VGS=
6V
-60
-60
-
@VGS=
7V
-40
-
-
-70
-60
-50
-40
-30
-20
-10
0
0 1 2 34 5 6 7
Bias VGS (V)
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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