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IRHLA770Z4 Datasheet, PDF (3/9 Pages) International Rectifier – RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (14-LEAD FLAT PACK
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IRHLA770Z4, 2N7620M2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each N-Channel Device @Tj = 25°C, Post Total Dose Irradiation ÄÅ
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
Parameter
Up to 300K Rads (Si)1
Min
Max
Drain-to-Source Breakdown Voltage
60
Gate Threshold Voltage
1.0
Gate-to-Source Leakage Forward
—
Gate-to-Source Leakage Reverse
—
Zero Gate Voltage Drain Current
—
Static Drain-to-Source „
On-State Resistance (TO-39)
—
Static Drain-to-Source On-state „
Resistance (14-Lead Flat Pack)
—
—
2.0
100
-100
1.0
0.60
0.60
Units
V
nA
µA
Ω
Ω
Test Conditions
VGS = 0V, ID = 250µA
VGS = VDS, ID = 250µA
VGS = 10V
VGS = -10V
VDS= 48V, VGS= 0V
VGS = 4.5V, ID = 0.5A
VGS = 4.5V, ID = 0.5A
VSD
Diode Forward Voltage „
—
1.2
V
VGS = 0V, ID = 0.8A
1. Part numbers IRHLA770Z4, IRHLA730Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
Ion
LET
Energy Range
VDS (V)
(MeV/(mg/cm2)) (MeV)
(µm) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V
-2V
-4V
-5V
-6V
-7V
-8V -10V
Br
37
305
39
60
60
60
60
60
35
30
20
I
60
370
34
60
60
60
60
60
20
15
-
Au
84
390
30
60
60
60
60
-
-
-
-
70
60
50
Br
40
30
I
20
Au
10
0
0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
VGS
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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