IRH7130_15 Datasheet, PDF (3/12 Pages) International Rectifier – Simple Drive Requirements

PRraed-iIartriaodniaCtihoanracteristics
IRH7130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
100K Rads(Si)
Min Max
300 - 1000K Rads (Si) Units
Min Max
Test Conditions
BV_DSS Drain-to-Source Breakdown Voltage 100
V/5JD Gate Threshold Voltage
2.0
I_GSS
Gate-to-Source Leakage Forward —
I_GSS
Gate-to-Source Leakage Reverse —
I_DSS
Zero Gate Voltage Drain Current
—
R_DS(on) Static Drain-to-Source" ➃
—
On-State Resistance (TO-3)
R_DS(on) Static Drain-to-Source" ➃
—
On-State Resistance (TO-204AA)
V_SD
Diode Forward Voltage" ➃
—
—
4.0
100
-100
25
0.18
100
—V
1.25 4.5
— 100 _nA
— -100
—
25 µA
— 0.24 Ω
0.18
—
0.24 Ω
1.8
— 1.8 V
V_GS = 0V, I_D = 1.0mA
VGS = V_DS, I_D = 1.0mA
V_GS = 20V
V_GS = -20 V
V_DS=80V, V_GS =0V
VGS = 12V, I_D =9.0A
VGS = 12V, I_D =9.0A
V_GS = 0V, IS = 14A
1. Part numbers IRH7130,
2. Part number IRH8130, IRH3130 and IRH4130
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy Range
VDS(V)
MeV/(mg/cm )) (MeV)
(µm) @VGS=0V @VGS=-5V@VGS=-10V@VGS=-15V@VGS=-20V
Cu
28
285
43
100
100
100
80
60
Br
36.8
305
39
100
90
70
50
—
120
100
80
Cu
60
Br
40
20
0
0
-5
-10
-15
-20
-25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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