IRGS4062DPBF_15 Datasheet, PDF (3/12 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

50
45
40
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160 180
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
1000
100
10µsec
10
100µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
DC
0.1
1
10
100
1000 10000
VCE (V)
Fig. 3 - Forward SOA
T_C = 25°C, T_J ≤ 175°C; V_GE =15V
90
80
70
VGE = 18V
VGE = 15V
60
VGE = 12V
VGE = 10V
50
VGE = 8.0V
40
30
20
10
0
012345678
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
T_J = -40°C; tp = 80µs
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IRGS/SL4062DPbF
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160 180
TC (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
1000
100
10
1
10
100
1000
VCE (V)
Fig. 4 - Reverse Bias SOA
T_J = 175°C; V_GE =15V
90
80
70
VGE = 18V
60
VGE = 15V
VGE = 12V
50
VGE = 10V
40
VGE = 8.0V
30
20
10
0
012345678
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
T_J = 25°C; tp = 80µs
3