IRGBC30M-S Datasheet, PDF (3/6 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A)

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IRGBC30M-S
30
20
Square wave:
60% of rated
voltage
10
Ideal diodes
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 21W
Triangular wave:
Clamp voltage:
80% of rated
0
A
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I _RMS of fundamental; for triangular wave, I=I _PK)
100
100
T_J = 25°C
T_J = 150°C
10
T_J = 150°C
10
T_J = 25°C
1
0.1
0.1
V_GE = 15V
20µs PULSE WIDTH _A
1
10
V_CE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
V_CC = 100V
1
5µs PULSE WIDTH _A
5
10
15
20
V_GE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
C-343
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