IRG4PF50WD Datasheet, PDF (3/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

40
30
Square wave:
20
60% of rated
voltage
I
10
Ideal diodes
0
0.1
IRG4PF50WD
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as specified
P ow er D is s ipation = 40 W
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I_RMS of fundamental)
1000
100
T_J = 25 °C
T_J = 150 ^°C
10
V_GE = 15V
20µs PULSE WIDTH
1
1
10
V_CE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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1000
100
T_J = 150 ^°C
T_J = 25 ^°C
10
V_CC = 50V
5µs PULSE WIDTH
1
5
6
7
8
9
10
V_GE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3