IRG4PC40SPBF_15 Datasheet, PDF (3/9 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

IRG4PC40SPbF
80
60
Squ are w ave:
40
60% of rated
v o ltage
Fo r bo th:
D uty cycle: 50%
T_J = 12 5°C
Tsink = 90°C
G ate drive as specifie d
Power Dissipation = 35W
Triangular wave:
C la m p v o lta ge :
80% of rated
20
Id e al d io d e s
0
A
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I_RMS of fundamental; for triangular wave, I=I_PK)
1000
1000
100
T_J = 25°C
10
TJ = 150°C
V _GE = 15V
1
20µs PULSE WIDTH _A
0.1
1
10
V_{C E} , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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100
T_J = 150°C
TJ = 25°C
10
V _CC = 50V
1
5µs PULSE WIDTH _A
5
6
7
8
9
10
V_{G E}, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3