IRG4PC30WPBF Datasheet, PDF (3/9 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

IRG4PC30WPbF
40
30
Square wave:
20
60% of rated
volt age
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 24W
Triangular wave:
Clamp voltage:
80% of rated
10
Ideal diodes
0
A
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I_RMS of fundamental; for triangular wave, I=I_PK)
100
T_J = 150 °C
10
T_J = 25 °C
V_GE = 15V
20µs PULSE WIDTH
1
1
10
V_CE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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100
T_J = 150 °C
10
T_J = 25 °C
1
0.1
5.0
V_CC = 50V
5µs PULSE WIDTH
6.0 7.0 8.0 9.0 10.0 11.0
V_GE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3