IRG4PC30FD Datasheet, PDF (3/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

25
20
15
60% of rated
v o lt a g e
10
5
0
0.1
IRG4PC30FD
Duty cycle: 50%
T _J = 125°C
T _sink = 90°C
G ate driv e as spec ified
Turn-on los ses inc lude
e ffe cts o f re ve rse re co ve ry
P owe r Dissip ation = 24W
A
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I_RMS of fundamental)
1000
1000
TJ = 25°C
100
TJ = 150°C
10
V _GE = 15V
1
20µs PULSE WIDTH _A
1
10
V_{C E} , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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100
TJ = 150°C
T_J = 25°C
10
V _CC = 50V
1
5µs PULSE WIDTH _A
5
6
7
8
9
10 11 12 13
V_{G E} , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3