IRG4IBC20W Datasheet, PDF (3/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

25
20
15
S qu are wave:
60% of rated
v oltag e
10
IRG4IBC20W
For both:
Duty cycle: 50%
TJ = 125° C
Tsink = 90°C
G ate drive as specified
Po w er D iss ip ation = 13 W
Trian gu la r w a ve:
C lam p vo lta ge:
80% of rated
5
Ideal diodes
0
A
0.1
1
10
100
1000
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I_RMS of fundamental)
100
100
10
 T_J = 150 ^°C
 T_J = 25 ^°C
 VGE = 15V
20µs PULSE WIDTH
1
1
10
V_CE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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 T_J = 150 ^°C
10
 T_J = 25 ^°C
 VCC = 50V
5µs PULSE WIDTH
1
5
6
7
9
10
11
V_GE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3