IRG4BC40WPBF Datasheet, PDF (3/9 Pages) International Rectifier – ISSULATED GATE BIPOLAR TRANSISTOR

50
40
30
Square wave:
60% of rated
voltage
20
10
0
0.1
Ideal diodes
1
IRG4BC40WPbF
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 28W
Triangular wave:
Clamp voltage:
80% of rated
A
10
100
1000
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I_RMS of fundamental)
1000
T_J = 25 °C
100
T_J = 150 °C
10
V_GE = 15V
80µs PULSE WIDTH
1
1.0
2.0
3.0
4.0
5.0
V_CE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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1000
100
T_J = 150 °C
10
T_J = 25 °C
V_CC = 50V
5µs PULSE WIDTH
1
5
7
9
11
V_GE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3