IRG4BC30F Datasheet, PDF (3/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

IRG4BC30F
50
40
30
S quare wave:
60 % of ra ted
vo lt a g e
20
I
10
Ideal diodes
For both:
D uty cycle: 50%
TJ = 125°C
Tsink = 90°C
Ga te drive as s pec ified
Power D iss ipation = 21 W
Triangular wave:
I
C lam p vo ltage :
80% of rated
0
A
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I_RMS of fundamental; for triangular wave, I=I_PK)
1000
1000
TJ = 25°C
100
TJ = 150°C
10
100
TJ = 150°C
T_J = 25°C
10
V _GE = 15V
1
20µs PULSE WIDTH _A
1
10
V_{C E} , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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V _CC = 50V
1
5µs PULSE WIDTH _A
5
6
7
8
9
10
11
12
13
V_{G E}, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3