IRG4BC20MD Datasheet, PDF (3/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)

12
10
8
6
4
2
0
0.1
100
60% of rated
voltage
IRG4BC20MD
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Turn-on losses include effects of
reverse recovery
Power Dissipation = 13W
Ideal diodes
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I_RMS of fundamental)
100
10
T_J = 150 ^°C
10
1
TJ = 150°C
1
TJ = 25°C
0.1
0.1
VGE= 15V
20µs PULSE WIDTH
1.0
10.0
VCE , Collector-to-Emitter Voltage (V)
0.1
6
T_J = 25 ^°C
V_CC = 50V
5µs PULSE WIDTH
8
10
12
14
16
V_GE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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Fig. 3 - Typical Transfer Characteristics
3