IRG4BC20FDPBF Datasheet, PDF (3/11 Pages) International Rectifier – INSULATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE

14
12
10
8
Square wave:
60% of rated
6
voltage
I
4
2
Ideal diodes
0
0.1
IRG4BC20FDPbF
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 13 W
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I_RMS of fundamental)
100
T_J = 25 ^oC
T_J = 150 ^oC
10
100
T_J = 150 ^oC
10
T_J = 25 ^oC
V_GE = 15V
20µs PULSE WIDTH
1
1
10
V_CE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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V_CC = 50V
5µs PULSE WIDTH
1
5 6 7 8 9 10 11 12 13 14
V_GE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3