IRFZ34NSPBF Datasheet, PDF (3/10 Pages) International Rectifier – HEXFET Power MOSFET

1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
IRFZ34NS/LPbF
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
1
0.1
4.5V
20µs PULSE WIDTH
T_CJ == 2255°°C
A
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
4.5V
20µs PULSE WIDTH
1
TTC_J = 175°C
A
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
T_J = 25°C
T_J = 175°C
10
V_DS = 25V
20µs PULSE WIDTH
1
A
4
5
6
7
8
9
10
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.4
ID = 26A
2.0
1.6
1.2
0.8
0.4
0.0
V_GS = 10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3