IRFI3205PBF Datasheet, PDF (3/9 Pages) International Rectifier – HEXFET® Power MOSFET

IRFI3205PbF
1000
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
10
0.1
4.5V
20µs PULSE WIDTH
T^T_CJ = 25°C
A
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4.5V
10
0.1
20µs PULSE WIDTH
TT_CJ= 175°C
A
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
TJ = 25°C
T_J = 175°C
100
10
V _DS= 25V
20µs PULSE WIDTH
1
A
4
5
6
7
8
9
10
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
2.0
I_D = 98A
1.5
1.0
0.5
0.0
V_GS = 10V _A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature