IRFH4226PBF_15 Datasheet, PDF (3/9 Pages) International Rectifier – Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters

1000
100
TOP
BOTTOM
VGS
10V
5.5V
4.5V
4.0V
3.5V
3.25V
3.0V
2.75V
1000
100
IRFH4226PbF
TOP
BOTTOM
VGS
10V
5.5V
4.5V
4.0V
3.5V
3.25V
3.0V
2.75V
10
1
0.1
2.75V
60µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
TJ = 150°C
10
2.75V
10
1
0.1
60µs PULSE WIDTH
Tj = 150°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
ID = 30A
1.6 ^{VGS = 10V}
1.4
1.2
1
0.1
1.0
TJ = 25°C
VDS = 10V
60µs PULSE WIDTH
2.0 3.0 4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
Ciss
Coss
Crss
Fig 4. Normalized On-Resistance vs. Temperature
14.0
ID= 30A
12.0
VDS= 20V
10.0
VDS= 13V
VDS= 5.0V
8.0
6.0
4.0
2.0
100
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.0
0
5 10 15 20 25 30 35 40
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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March 11, 2015