IRFBA1404P Datasheet, PDF (3/9 Pages) International Rectifier – Power MOSFET(Vdss=40V, Rds(on)=3.7mohm, Id=206A)

1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
IRFBA1404P
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
0.1
20µs PULSE WIDTH
TJ = 25 ^°C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
0.1
20µs PULSE WIDTH
TJ = 175 ^°C
1
10
100
V_DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
T_J = 25^° C
T_J = 175 ^° C
10
4.0
V _DS= 25V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.5 _{ID = 159A}
2.0
1.5
1.0
0.5
V_GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3