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IRFB7545PBF_15 Datasheet, PDF (3/10 Pages) International Rectifier – Brushed motor drive applications | |||
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IRFB7545PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff.(ER)
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg â Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
90 âââ âââ S VDS = 25V, ID = 57A
âââ 75 110
ID = 57A
âââ
19
âââ nC VDS = 30V
âââ 24 âââ
VGS = 10V
âââ 32 âââ
âââ 12 âââ
VDD = 30V
âââ
âââ
72
44
âââ
âââ
ns
ID = 57A
RG= 2.7ïï
âââ 43 âââ
VGS = 10V ï
âââ 4010 âââ
VGS = 0V
âââ 370 âââ
VDS = 25V
âââ 230 âââ pF Æ = 1.0MHz, See Fig.7
âââ 370 âââ
VGS = 0V, VDS = 0V to 48Vï
Coss eff.(TR) Output Capacitance (Time Related)
âââ 470 âââ
VGS = 0V, VDS = 0V to 48Vï
Diode Characteristics
Symbol
IS
ISM
VSD
dv/dt
trr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ïï
Diode Forward Voltage
Peak Diode Recovery dv/dtï
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Min.
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
12
33
37
36
48
2.0
Max. Units
Conditions
95
380
MOSFET symbol
A
showing the
integral reverse
G
p-n junction diode.
D
S
1.2 V TJ = 25°C,IS = 57A,VGS = 0V ïï
âââ V/ns TJ = 175°C,IS = 57A,VDS = 60Vï
âââ
âââ
ns
TJ = 25°C
TJ = 125°C
VDD = 51V
IF = 57A,
âââ
âââ
nC
TJ = 25°C
TJ = 125°C
di/dt = 100A/µs ïï ï
âââ A TJ = 25°C ï
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November 5, 2014
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