IRFB7437PBF_15 Datasheet, PDF (3/10 Pages) International Rectifier – Brushed Motor drive applications

IRFB7437PbF
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs
Forward Transconductance
160
Q_g
Total Gate Charge
–––
Q_gs
Gate-to-Source Charge
–––
Q_gd
Gate-to-Drain ("Miller") Charge
–––
Q_sync
Total Gate Charge Sync. (Q_g - Q_gd)
–––
t_d(on)
Turn-On Delay Time
–––
t_r
Rise Time
–––
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss eff. (ER)
C_oss eff. (TR)
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
ià Effective Output Capacitance (Energy Related) –––
h Effective Output Capacitance (Time Related)
–––
Typ.
–––
150
41
51
99
19
70
78
53
7330
1095
745
1310
1735
Max. Units
Conditions
––– S V_DS = 10V, I_D = 100A
225 nC I_D = 100A
–––
–––
g ^{VDS =20V}
V_GS = 10V
–––
I_D = 100A, V_DS =20V, V_GS = 10V
––– ns V_DD = 20V
–––
I_D = 30A
–––
–––
g ^{RG = 2.7Ω}
V_GS = 10V
––– pF V_GS = 0V
–––
V_DS = 25V
–––
ƒ = 1.0 MHz, See Fig. 5
–––
–––
i V_GS = 0V, V_DS = 0V to 32V , See Fig. 11
h V_GS = 0V, V_DS = 0V to 32V
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ãd (Body Diode)
V_SD
dv/dt
Diode Forward Voltage
f Peak Diode Recovery
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
Min. Typ. Max. Units
Conditions
™ ––– ––– 250 A MOSFET symbol
D
showing the
––– ––– 1000 A integral reverse
G
p-n junction diode.
S
–––
–––
1.0
3.1
g 1.3 V T_J = 25°C, I_S = 100A, V_GS = 0V
g ––– V/ns T_J = 175°C, I_S = 100A, V_DS = 40V
––– 30 ––– ns T_J = 25°C
V_R = 34V,
––– 30 –––
T_J = 125°C
––– 24 ––– nC T_J = 25°C
g ^{IF = 100A}
di/dt = 100A/μs
––– 25 –––
T_J = 125°C
––– 1.3 ––– A T_J = 25°C
3 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
January 6, 2015