IRFB42N20D Datasheet, PDF (3/8 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)max=0.055ohm, Id=44A)

IRFB42N20D
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM 5.0V
10
1
0.1
0.01
0.1
5.0V
20µs PULSE WIDTH
TJ = 25 °C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM 5.0V
10
5.0V
20µs PULSE WIDTH
TJ = 175 °C
1
0.1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
T_J = 175 ^° C
10
1
T_J = 25° C
0.1
5
V _DS= 50V
20µs PULSE WIDTH
6
7
8
9
10
11
V_GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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3.5 _{ID = 44A}
3.0
2.5
2.0
1.5
1.0
0.5
V_GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3