IRF9910 Datasheet, PDF (3/10 Pages) International Rectifier – Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box

Typical Characteristics
IRF9910
10000
1000
100
Q1 - Control FET
TOP
BOTTOM
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
10000
1000
100
Q2 - Synchronous FET
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
10
10
1
0.1
0.01
0.1
≤60µs PULSE WIDTH
Tj = 25°C
2.5V
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
0.1
0.01
0.1
2.5V
≤60µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
10000
1000
100
TOP
BOTTOM
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
10000
1000
100
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
10
1
0.1
0.1
2.5V
≤60µs PULSE WIDTH
Tj = 150°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 3. Typical Output Characteristics
10
1
0.1
0.1
2.5V
≤60µs PULSE WIDTH
Tj = 150°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
100
100
TJ = 150°C
10
10
TJ = 25°C
1
TJ = 25°C
0.1
VDS = 10V
≤60µs PULSE WIDTH
2
3
4
5
6
VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
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1
TJ = 150°C
0.1
VDS = 10V
≤60µs PULSE WIDTH
1
2
3
4
5
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
3