IRF8113PBF Datasheet, PDF (3/10 Pages) International Rectifier – HEXFET®Power MOSFET

IRF8113PbF
1000
100
VGS
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
1000
100
VGS
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
10
1
0.01
2.5V
20µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2.5V
10
1
0.01
20µs PULSE WIDTH
Tj = 150°C
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 150°C
TJ = 25°C
10
1
2.5
VDS = 15V
20µs PULSE WIDTH
3.0
3.5
4.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0
ID = 16.6A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3