IRF7946TRPBF Datasheet, PDF (3/12 Pages) International Rectifier – Brushed Motor drive applications

IRF7946PbF
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
gfs
Forward Transconductance
Q_g
Q_gs
Q_gd
Q_sync
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss eff. (ER)
C_oss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q_g - Q_gd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ãd (Body Diode)
V_SD
dv/dt
Diode Forward Voltage
f Peak Diode Recovery
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
Min.
91
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
141
36
44
97
20
49
54
41
6852
1046
735
1307
1465
Max.
–––
212
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
S V_DS = 10V, I_D = 90A
nC I_D = 90A
g ^{VDS =20V}
V_GS = 10V
I_D = 90A, V_DS =0V, V_GS = 10V
ns V_DD = 20V
I_D = 30A
g ^{RG = 2.7}
V_GS = 10V
pF V_GS = 0V
V_DS = 25V
ƒ = 1.0 MHz
i V_GS = 0V, V_DS = 0V to 32V
h V_GS = 0V, V_DS = 0V to 32V
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.75
1.6
49
50
74
73
2.6
Max.
96™
793
1.2
–––
–––
–––
–––
–––
–––
Units
Conditions
A MOSFET symbol
D
showing the
A integral reverse
G
V
V/ns
ns
nC
A
p-n junction diode.
S
g T_J = 25°C, I_S = 90A, V_GS = 0V
T_J = 175°C, I_S = 90A, V_DS = 40V
T_J = 25°C
V_R = 34V,
T_J = 125°C
T_J = 25°C
g ^{IF = 90A}
di/dt = 100A/μs
T_J = 125°C
T_J = 25°C
Notes:
 Calculated continuous current based on maximum allowable junction … Pulse width  400μs; duty cycle  2%.
temperature. Bond wire current limit is 90A. Note that current
† C_oss eff. (TR) is a fixed capacitance that gives the same charging time
limitations arising from heating of the device leads may occur with
as C_oss while V_DS is rising from 0 to 80% V_DSS.
some lead mounting arrangements. (Refer to AN-1140)
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.021mH
R_G = 50, I_AS = 90A, V_GS =10V.
„ I_SD  90A, di/dt  1135A/μs, V_DD V_(BR)DSS, T_J  150°C.
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
‰ R_ is measured at T_J approximately 90°C.
Š This value determined from sample failure population,
starting T_J = 25°C, L= 0.021mH, R_G = 50, I_AS = 90A, V_GS =10V.
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