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IRF7780MPBF_15 Datasheet, PDF (3/12 Pages) International Rectifier – Brushed Motor drive applications | |||
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IRF7780MTRPbF
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
Qsync
Total Gate Charge Sync. (Qg - Qgd)
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss eff. (ER) Effective Output Capacitance (Energy Related)
Coss eff. (TR) Effective Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ï
VSD
Diode Forward Voltage
dv/dt
Peak Diode Recovery ï
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Min.
154
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Min.
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
124
29
38
86
18
26
60
26
6504
547
334
498
630
Typ.
âââ
âââ
âââ
12
35
38
45
58
2.2
Max. Units
Conditions
âââ S VDS = 10V, ID = 53A
186
ID = 53A
âââ
âââ
nC
VDS = 38V
VGS = 10V ï
âââ
âââ
VDD = 38V
âââ
âââ
ns
ID = 30A
RG = 2.7ï
âââ
VGS = 10V ï
âââ
VGS = 0V
âââ
VDS = 25V
âââ pF Æ = 1.0MHz
âââ
VGS = 0V, VDS = 0V to 60V ï
âââ
VGS = 0V, VDS = 0V to 60V ï
Max. Units
Conditions
89
356
MOSFET symbol
A
showing the
integral reverse
G
p-n junction diode.
D
S
1.2 V TJ= 25°C,IS = 53A, VGS = 0Vï
âââ
V/ns
TJ =150°C,IS = 53A,
VDS = 75V
âââ
âââ
ns
TJ = 25° C VR = 64V,
TJ = 125°C IF = 53A
âââ
âââ
nC
TJ = 25°C di/dt = 100A/µs ï
TJ = 125°C
âââ A TJ = 25°C
Notes:
ïï Repetitive rating; pulse width limited by max. junction temperature.
ï Limited by TJmax, starting TJ = 25°C, L = 0.058mH, RG = 50ï, IAS = 53A, VGS =10V.
ï ISD ⤠53A, di/dt ⤠1580A/µs, VDD ⤠V(BR)DSS, TJ ⤠150°C.
ïï Pulse width ⤠400µs; duty cycle ⤠2%.
ï
ï Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
ïï Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
ïï When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer
to application note # AN-994. http://www.irf.com/technical-info/appnotes/an-994.pdf
ï Rï± is measured at TJ approximately 90°C.
ï Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50ï, IAS = 16A, VGS =10V.
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June 4, 2015
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