IRF7607 Datasheet, PDF (3/8 Pages) International Rectifier – Power MOSFET(Vdss=20V, Rds(on)=0.030ohm)

100
VGS
TOP 7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
BOTTOM 1.50V
10
PROVISIONAL
100
VGS
TOP 7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
BOTTOM 1.50V
10
IRF7607
1.50V
20µs PULSE WIDTH
TJ = 25 ^°C
1
0.1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.50V
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
T_J = 25^° C
T_J = 150^° C
10
V _DS= 15V
20µs PULSE WIDTH
1
1.5
2.0
2.5
3.0
3.5
V_GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0 _{ID = 5.3A}
1.5
1.0
0.5
V_GS = 4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3