IRF7530PBF Datasheet, PDF (3/8 Pages) International Rectifier – HEXFET Power MOSFET

100
VGS
TOP 7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
IRF7530PbF
100
VGS
TOP 7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
2.25V
10
0.1
20µs PULSE WIDTH
TJ= 25 °C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2.25V
10
0.1
20µs PULSE WIDTH
TJ = 150 °C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
T_J = 25° C
T_J = 150° C
10
2.0
V _DS= 15V
20µs PULSE WIDTH
2.5
3.0
3.5
4.0
4.5
V_GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0 _{ID = 5.0A}
1.5
1.0
0.5
V_GS = 4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3